Ultraviolet light assisted oxygenation process for submicron YBa ₂Cu₃O_7-δ thin film devices (2024)

Herbstritt, F., Kemen, T., Marx, A. (2002). Ultraviolet light assisted oxygenation process for submicron YBa 2Cu3O7-δ thin film devices. Journal of Applied Physics, 91(8), 5411-5418. https://doi.org/10.1063/1.1459599

Herbstritt, F. ; Kemen, T. ; Marx, A. et al. / Ultraviolet light assisted oxygenation process for submicron YBa 2Cu3O7-δ thin film devices. In: Journal of Applied Physics. 2002 ; Vol. 91, No. 8. pp. 5411-5418.

@article{7ac1f24b64c9482096f2fbaa2258b4ec,

title = "Ultraviolet light assisted oxygenation process for submicron YBa 2Cu3O7-δ thin film devices",

abstract = "We have successfully fabricated superconducting nanobridges and grain-boundary junctions from epitaxial YBa2Cu3O 7-δ thin films with thickness between 20 and 30 nm and width down to ∼100 nm. The patterning process turned out to severely deteriorate the transport properties resulting in structural damage, corrosion, and oxygen loss. The most crucial steps are the baking procedure used to cure the electron beam resist, the resist development, and the ion beam etching process. By optimizing these steps and applying a suitable post-treatment procedure a significant enhancement of the sample quality could be achieved. An ultraviolet light assisted oxygenation procedure after the patterning process enabled us to achieve superconducting transition temperatures between 80 and 87 K and critical current densities at 4.2 K up to 4×107Acm−2 for the nanobridges and 5×103-2×105Acm−2 for the grain boundary junctions. At 4.2 K junctions with width down to 100 nm corresponding to a junction area down to 2.3×10−3 μm 2 showed superconductivity.",

author = "F. Herbstritt and T. Kemen and A. Marx and R. Gross",

year = "2002",

month = apr,

day = "15",

doi = "10.1063/1.1459599",

language = "English",

volume = "91",

pages = "5411--5418",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

Herbstritt, F, Kemen, T, Marx, A 2002, 'Ultraviolet light assisted oxygenation process for submicron YBa 2Cu3O7-δ thin film devices', Journal of Applied Physics, vol. 91, no. 8, pp. 5411-5418. https://doi.org/10.1063/1.1459599

Ultraviolet light assisted oxygenation process for submicron YBa 2Cu3O7-δ thin film devices. / Herbstritt, F.; Kemen, T.; Marx, A. et al.
In: Journal of Applied Physics, Vol. 91, No. 8, 15.04.2002, p. 5411-5418.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Ultraviolet light assisted oxygenation process for submicron YBa 2Cu3O7-δ thin film devices

AU - Herbstritt, F.

AU - Kemen, T.

AU - Marx, A.

AU - Gross, R.

PY - 2002/4/15

Y1 - 2002/4/15

N2 - We have successfully fabricated superconducting nanobridges and grain-boundary junctions from epitaxial YBa2Cu3O 7-δ thin films with thickness between 20 and 30 nm and width down to ∼100 nm. The patterning process turned out to severely deteriorate the transport properties resulting in structural damage, corrosion, and oxygen loss. The most crucial steps are the baking procedure used to cure the electron beam resist, the resist development, and the ion beam etching process. By optimizing these steps and applying a suitable post-treatment procedure a significant enhancement of the sample quality could be achieved. An ultraviolet light assisted oxygenation procedure after the patterning process enabled us to achieve superconducting transition temperatures between 80 and 87 K and critical current densities at 4.2 K up to 4×107Acm−2 for the nanobridges and 5×103-2×105Acm−2 for the grain boundary junctions. At 4.2 K junctions with width down to 100 nm corresponding to a junction area down to 2.3×10−3 μm 2 showed superconductivity.

AB - We have successfully fabricated superconducting nanobridges and grain-boundary junctions from epitaxial YBa2Cu3O 7-δ thin films with thickness between 20 and 30 nm and width down to ∼100 nm. The patterning process turned out to severely deteriorate the transport properties resulting in structural damage, corrosion, and oxygen loss. The most crucial steps are the baking procedure used to cure the electron beam resist, the resist development, and the ion beam etching process. By optimizing these steps and applying a suitable post-treatment procedure a significant enhancement of the sample quality could be achieved. An ultraviolet light assisted oxygenation procedure after the patterning process enabled us to achieve superconducting transition temperatures between 80 and 87 K and critical current densities at 4.2 K up to 4×107Acm−2 for the nanobridges and 5×103-2×105Acm−2 for the grain boundary junctions. At 4.2 K junctions with width down to 100 nm corresponding to a junction area down to 2.3×10−3 μm 2 showed superconductivity.

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Herbstritt F, Kemen T, Marx A, Gross R. Ultraviolet light assisted oxygenation process for submicron YBa 2Cu3O7-δ thin film devices. Journal of Applied Physics. 2002 Apr 15;91(8):5411-5418. doi: 10.1063/1.1459599